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BAT74S Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAT74S Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2003 Apr 11 3 Philips Semiconductors Product specification Schottky barrier double diode BAT74S ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT363 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.4 2 µA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR =1mA 5ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 416 K/W |
Número de pieza similar - BAT74S_03 |
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Descripción similar - BAT74S_03 |
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