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BF485PN Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF485PN Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 Aug 02 3 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a from junction to ambient in free air; note 1 208 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current IE = 0; VCB = 300 V; − 50 nA IE = 0; VCB = 250 V; Tj = 150 °C − 50 µA IEBO emitter-base cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain IC = 1 mA; VCE =10V 60 − IC = 30 mA; VCE =10V 50 − VCEsat saturation voltage IC = 20 mA; IB =2mA − 250 mV VBEsat saturation voltage IC = 20 mA; IB =2mA − 850 mV Cc collector capacitance IE =Ie = 0; VCB = 20 V; f = 1 MHz − 6pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 50 − MHz handbook, halfpage 300 0 200 100 MLD391 10−1 1 IC (mA) hFE 10 102 (2) (3) (1) Fig.2 DC current gain as a function of collector current: typical values. TR1 (NPN); VCE =10V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 02 (1) (6) (7) (10) (2) (3) (4) (5) 10 200 150 50 0 100 4 VCE (V) IC (mA) 68 MLD392 (9) (8) Fig.3 Collector current as a function of collector-emitter voltage; typical values. TR1 (NPN). (1) IB = 30 mA. (2) IB = 27 mA. (3) IB = 24 mA. (4) IB = 21 mA. (5) IB = 18 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (9) IB = 6 mA. (10) IB = 3 mA. |
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