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BF485PN Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BF485PN
Descripción Electrónicos  NPN/PNP high voltage transistors
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF485PN Datasheet(HTML) 3 Page - NXP Semiconductors

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2000 Aug 02
3
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
from junction to ambient
in free air; note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
IE = 0; VCB = 300 V;
50
nA
IE = 0; VCB = 250 V; Tj = 150 °C
50
µA
IEBO
emitter-base cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 1 mA; VCE =10V
60
IC = 30 mA; VCE =10V
50
VCEsat
saturation voltage
IC = 20 mA; IB =2mA
250
mV
VBEsat
saturation voltage
IC = 20 mA; IB =2mA
850
mV
Cc
collector capacitance
IE =Ie = 0; VCB = 20 V; f = 1 MHz
6pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
50
MHz
handbook, halfpage
300
0
200
100
MLD391
10−1
1
IC (mA)
hFE
10
102
(2)
(3)
(1)
Fig.2
DC current gain as a function of collector
current: typical values.
TR1 (NPN); VCE =10V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
02
(1)
(6)
(7)
(10)
(2)
(3)
(4)
(5)
10
200
150
50
0
100
4
VCE (V)
IC
(mA)
68
MLD392
(9)
(8)
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
TR1 (NPN).
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5) IB = 18 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
(8) IB = 9 mA.
(9) IB = 6 mA.
(10) IB = 3 mA.


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