Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR620

__ __ __ __

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

│

│

└

(See Figure 1)

DB = Down Bend

UB = Up Bend

│

│

│

│

│

│

│

│

M = TO-254

Z = TO-254Z

│

│

│

│

│

│

│

│

│

│

│

└

(See Table 1)

R = Reverse

│

│

│

│

│

│

│

│

│

│

│

│

│

└

SDR621 = 150V

SDR622 = 200V

SDR620J, M & Z

Thru

SDR622J, M & Z

20A, 35nsec, 100-200 V

Hyper Fast Rectifier

•

•

Low Reverse Leakage Current

•

Low Junction Capacitance

•

Hermetically Sealed Isolated Package

•

Higher Voltages Available

•

Available in Centertap Versions

•

Replaces 1N5816 and 1N5816R

•

•

Symbol

Value

Units

Peak Repetitive Reverse Voltage

SDR620J, M & Z

SDR621J, M & Z

SDR622J, M & Z

100

150

200

Volts

Average Rectified Forward Current

Io

20

Amps

Peak Surge Current

300

Amps

Operating & Storage Temperature

-65 to +200

ºC

Maximum Total Thermal Resistance

Junction to Case

J (TO-257)

M (TO-254)

Z (TO-254Z)

2.1

1.2

1.2

ºC/W

Notes:

1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.

TO-257 (J)

TO-254 (M)

TO-254Z (Z)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0031C

DOC