1N4001 – 1N4007

1 of 4

© 2006 Won-Top Electronics

Pb

1N4001 – 1N4007

1.0A STANDARD DIODE

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

C

!

Case: DO-41, Molded Plastic

D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.35 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N

4001

1N

4002

1N

4003

1N

4004

1N

4005

1N

4006

1N

4007

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

30

A

Forward Voltage

1.0

V

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

50

µA

Typical Junction Capacitance (Note 2)

15

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

50

°C/W

Operating Temperature Range

-65 to +125

°C

Storage Temperature Range

-65 to +150

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

DO-41

Dim

Min

Max

A

25.4

—

B

4.06

5.21

C

0.71

0.864

D

2.00

2.72

All Dimensions in mm