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IRFB3307ZPBF Datasheet(PDF) 3 Page - International Rectifier

No. de pieza IRFB3307ZPBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  11 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRFB3307ZPBF Datasheet(HTML) 3 Page - International Rectifier

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IRFB/S/SL3307ZPbF
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
ID = 72A
VGS = 10V
0
102030
405060
70
80
90
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 60V
VDS= 38V
VDS= 15V
ID= 72A


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