SI2302DS datasheet(8/12 Pages) PHILIPS

No. de pieza	SI2302DS

Descripción Electrónicos	N-channel enhancement mode field-effect transistor

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Philips Semiconductors

SI2302DS

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 02 — 20 November 2001

8 of 12

9397 750 09107

Tj =25 °C and 150 °C; VGS =0V

ID = 3.6 A; VDD =10V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03ae97

0

2

4

6

8

10

0

0.4

0.8

1.2

VSD (V)

IS

(A)

Tj = 25 ºC

150 ºC

VGS = 0 V

03ae99

0

1

2

3

4

5

0123456

QG (nC)

VGS

(V)

ID = 3.6 A

Tj = 25 ºC

VDD = 10 V

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SI2302DS Datasheet(PDF) 8 Page - NXP Semiconductors

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