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SI2302DS Datasheet(PDF) 8 Page - NXP Semiconductors |
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SI2302DS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor Product data Rev. 02 — 20 November 2001 8 of 12 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 3.6 A; VDD =10V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03ae97 0 2 4 6 8 10 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC 150 ºC VGS = 0 V 03ae99 0 1 2 3 4 5 0123456 QG (nC) VGS (V) ID = 3.6 A Tj = 25 ºC VDD = 10 V |
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