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SI4800 Datasheet(PDF) 9 Page - NXP Semiconductors |
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SI4800 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 13 page Philips Semiconductors Si4800 N-channel enhancement mode field-effect transistor Product data Rev. 01 — 13 July 2001 9 of 13 9397 750 08412 © Philips Electronics N.V. 2001. All rights reserved. 9. Package outline Fig 14. SOT96-1 (SO8). UNIT A max. A1 A2 A3 bp cD(1) E(2) (1) eHE LLp QZ y w v θ REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 1.0 0.4 SOT96-1 X w M θ A A1 A2 b p D HE L p Q detail X E Z e c L v M A (A ) 3 A 4 5 pin 1 index 1 8 y 076E03S MS-012AA 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.050 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 95-02-04 97-05-22 |
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