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1N3611 Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N3611 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 3 page VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 12-08 2004 REV A SCOTTSD A L E DIVISION 1N3611 thru 1N3614, 1N3957 DESCRIPTION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF- 19500/228 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF package configurations are available by adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. “A” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N3611 thru 1N3614 and 1N3597 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 200 to 1000 Volts. • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/286 (for JANS, see 1N5614-5622 series) • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (also see 1N5614US thru 1N5622US) • Standard recovery 1 Amp rectifiers 200 to 1000 V • Military and other high-reliability applications • General rectifier applications including bridges, half- bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65oC to +175oC • Thermal Resistance: 38oC/W junction to lead at 3/8 inch (10 mm) lead length from body • Average Rectified Forward Current (IO): 1.0 Amps @ TA = 100ºC and 0.30 Amps at 150ºC • Forward Surge Current: 30 Amps @ 8.3 ms half-sine • Solder Temperatures: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish • MARKING: Body paint and part number, etc. • POLARITY: Cathode band • TAPE & REEL option: Standard per EIA-296 • WEIGHT: 340 mg • See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 100µA AVERAGE RECTIFIED CURRENT (NOTE 2) IO MAXIMUM FORWARD VOLTAGE VF @ 1 A (PULSED) MAXIMUM REVERSE CURRENT IR @ VRWM MAXIMUM SURGE CURRENT (NOTE1) IFSM VOLTS VOLTS AMPS VOLTS µA AMPS 100 oC 150 oC 25 oC 150 oC JAN1N3611 JAN1N3612 JAN1N3613 JAN1N3614 JAN1N3957 200 400 600 800 1000 240 480 720 920 1150 1.0 1.0 1.0 1.0 1.0 0.30 0.30 0.30 0.30 0.30 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.0 1.0 300 300 300 300 300 30 30 30 30 30 NOTE 1: TA = 25 oC, IO = 1.0 A, 10 surges of 8.3 ms @ 1 minute intervals NOTE 2: Linearly derate at 13.3 mA/ºC between TA=100ºC and 175ºC |
Número de pieza similar - 1N3611_04 |
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Descripción similar - 1N3611_04 |
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