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TDA5631 Datasheet(PDF) 9 Page - NXP Semiconductors |
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TDA5631 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 28 page 1996 Mar 21 9 Philips Semiconductors Product specification 9 V VHF, hyperband and UHF mixer/oscillator for TV and VCR 3-band tuners TDA5630; TDA5631 Notes to the characteristics 1. The RF frequency range is defined by the oscillator frequency range and the intermediate frequency. 2. The gain is defined as the transducer gain (measured in Fig.12) plus the voltage transformation ratio of L6 to L7 (10 : 2, 15.4 dB including transformer loss). 3. The input level causing 10 kHz frequency detuning at the LO output. fosc =fRF + 33.4 MHz. 4. All S-parameters are referred to a 50 Ω system. 5. Limits are related to the tank circuits used in Fig.12. Frequency bands may be adjusted by the choice of external components. 6. The frequency shift is defined for a variation of power supply, first from VP = 9 to 8.1 V, then from VP = 9 to 9.9 V. In both cases, the frequency shift is below the specified value. 7. The frequency drift is defined for a variation of ambient temperature, first from Tamb =25 °C to Tamb =0 °C, then from Tamb =25 °C to Tamb =50 °C. In both cases, the frequency drift is below the specified value with NP0 capacitors. Capacitor types C1 to C11, as specified in Fig.12 for non-PLL applications, must be changed to series with other temperature coefficients (e.g. N330, N750 etc.). 8. Switch on drift is the change of oscillator frequency between 5s and 15 min after switch on. 9. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the hybrid is 100 Ω. 10. Measured with RF input voltage: a) RF voltage = 120 dB µV at fRF < 180 MHz. b) RF voltage = 107.5 dB µV at 180 MHz < fRF < 225 MHz. c) RF voltage = 97 dB µV at 225 MHz < fRF < 860 MHz. |
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