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IRF7207PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRF7207PBF
Descripción Electrónicos  HEXFET짰 Power MOSFET
Download  7 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7207PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7207PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.011 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.06
VGS = -4.5V, ID = -5.4A
„
––– ––– 0.10
VGS = -2.7V, ID = -2.7A
„
VGS(th)
Gate Threshold Voltage
-0.7
–––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
8.3
–––
–––
S
VDS = -10V, ID = -5.4A
––– ––– -1.0
VDS = -16V, VGS = 0V
––– –––
-25
VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = 12V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = -12V
Qg
Total Gate Charge
–––
15
22
ID = -5.4A
Qgs
Gate-to-Source Charge
–––
2.2
3.3
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.7
8.6
VGS = -4.5V,
„
td(on)
Turn-On Delay Time
–––
11
–––
VDD = -10V
tr
Rise Time
–––
24
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
43
–––
RG = 6.0Ω
tf
Fall Time
–––
41
–––
RD = 10Ω,
„
Ciss
Input Capacitance
––– 780
–––
VGS = 0V
Coss
Output Capacitance
––– 410
–––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
––– 200
–––
ƒ = 1.0MHz,
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
––– -1.0
V
TJ = 25°C, IS = -3.1A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
42
63
ns
TJ = 25°C, IF = -3.1A
Qrr
Reverse RecoveryCharge
–––
50
75
nC
di/dt = -100A/µs
ƒ
Source-Drain Ratings and Characteristics
–––
–––
––– –––
-43
-3.1
A
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 9.6mH
RG = 25Ω, IAS = -5.4A.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec


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