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SI4862DY_07 Datasheet(Hoja de datos) 2 Page - Vishay Siliconix

No. de Pieza. SI4862DY_07
Descripción  N-Channel 16-V (D-S) MOSFET
Descarga  5 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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Si4862DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71439
S-03662—Rev. B, 14-Apr-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.6
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 12.8 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 12.8 V, VGS = 0 V, TJ = 55_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 4.5 V
30
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 25 A
0.0027
0.0033
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 20 A
0.0045
0.0055
W
Forward Transconductancea
gfs
VDS = 6 V, ID = 25 A
140
S
Diode Forward Voltagea
VSD
IS = 2.9 A, VGS = 0 V
0.75
1.1
V
Dynamicb
Total Gate Charge
Qg
48
70
Gate-Source Charge
Qgs
VDS = 6 V, VGS = 4.5 V, ID = 25 A
11.8
nC
Gate-Drain Charge
Qgd
8.9
Gate Resistance
Rg
0.5
1.3
2.2
W
Turn-On Delay Time
td(on)
42
60
Rise Time
tr
VDD = 6 V, RL = 6 W
38
60
Turn-Off Delay Time
td(off)
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
120
180
ns
Fall Time
tf
50
75
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
80
120
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
012345
VGS = 5 thru 2.5 V
25
_C
TC = 125_C
-55
_C
2 V
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)




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