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TEA1068 Datasheet(PDF) 11 Page - NXP Semiconductors

No. de pieza TEA1068
Descripción Electrónicos  Versatile telephone transmission circuit with dialler interface
Download  24 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA1068 Datasheet(HTML) 11 Page - NXP Semiconductors

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1996 Apr 23
11
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
Transmitting amplifier output LN
VLN(rms)
output voltage (RMS value)
Iline =15mA
THD = 2%
1.9
2.3
V
THD = 10%
2.6
V
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R7 = 68 kΩ;
200
Ω between MIC− and
MIC+; psophometrically
weighted (P53 curve)
−−72
dBmp
Receiving amplifier input IR
Zi
input impedance
17
21
25
k
Receiving amplifier outputs QR+ and QR
Z
o
output impedance
single ended
4
−Ω
Gv
voltage gain from IR to QR+ or
QR
Iline =15mA
RL (from QR+ or
QR
−) = 300 Ω; single-ended
24
25
26
dB
RL (from QR+ or
QR
−) = 600 Ω; differential
30
31
32
dB
∆G
vf
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
with respect to 800 Hz
−0.5
−0.2
0
dB
∆GvT
gain variation with temperature at
Tamb =−25 °C and +75 °C
Iline =50mA;
with respect to 25
°C;
without R6
−±0.2
dB
Vo(rms)
output voltage (RMS value)
sine wave drive; Iline = 15 mA;
Ip = 0 mA; THD = 2%;
R4 = 100 k
single-ended; RL = 150 Ω
0.3
0.38
V
single-ended; RL = 450 Ω
0.4
0.52
V
differential; f = 3400 Hz;
Rseries = 100 Ω; CL =47nF
0.8
1.0
V
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R4 = 100 kΩ;
IR open-circuit
psophometrically weighted
(P53 curve)
single-ended; RL = 300 Ω−
50
−µV
differential; RL = 600 Ω−
100
−µV
Gain adjustment GAR
∆Gv
gain variation of receiving amplifier
achievable by varying R4 between
GAR and QR
−8
+8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


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