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TEA1068 Datasheet(PDF) 11 Page - NXP Semiconductors |
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TEA1068 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 24 page 1996 Apr 23 11 Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface TEA1068 Transmitting amplifier output LN VLN(rms) output voltage (RMS value) Iline =15mA THD = 2% 1.9 2.3 − V THD = 10% − 2.6 − V Vno(rms) noise output voltage (RMS value) Iline = 15 mA; R7 = 68 kΩ; 200 Ω between MIC− and MIC+; psophometrically weighted (P53 curve) −−72 − dBmp Receiving amplifier input IR Zi input impedance 17 21 25 k Ω Receiving amplifier outputs QR+ and QR − Z o output impedance single ended − 4 −Ω Gv voltage gain from IR to QR+ or QR − Iline =15mA RL (from QR+ or QR −) = 300 Ω; single-ended 24 25 26 dB RL (from QR+ or QR −) = 600 Ω; differential 30 31 32 dB ∆G vf gain variation with frequency at f = 300 Hz and f = 3400 Hz with respect to 800 Hz −0.5 −0.2 0 dB ∆GvT gain variation with temperature at Tamb =−25 °C and +75 °C Iline =50mA; with respect to 25 °C; without R6 −±0.2 − dB Vo(rms) output voltage (RMS value) sine wave drive; Iline = 15 mA; Ip = 0 mA; THD = 2%; R4 = 100 k Ω single-ended; RL = 150 Ω 0.3 0.38 − V single-ended; RL = 450 Ω 0.4 0.52 − V differential; f = 3400 Hz; Rseries = 100 Ω; CL =47nF 0.8 1.0 − V Vno(rms) noise output voltage (RMS value) Iline = 15 mA; R4 = 100 kΩ; IR open-circuit psophometrically weighted (P53 curve) single-ended; RL = 300 Ω− 50 −µV differential; RL = 600 Ω− 100 −µV Gain adjustment GAR ∆Gv gain variation of receiving amplifier achievable by varying R4 between GAR and QR −8 − +8 dB SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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