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RJK1525DPS Datasheet(PDF) 2 Page - Renesas Technology Corp

No. de pieza RJK1525DPS
Descripción Electrónicos  Silicon N Channel MOS FET High Speed Power Switching
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK1525DPS Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJK1525DPS
Rev.2.00 Feb 08, 2007 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
150
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 150 V, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
4.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
6
11
S
ID = 8.5 A, VDS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.089
0.110
ID = 8.5 A, VGS = 10 V
Note4
Input capacitance
Ciss
680
pF
Output capacitance
Coss
150
pF
Reverse transfer capacitance
Crss
22
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
22
ns
Rise time
tr
70
ns
Turn-off delay time
td(off)
47
ns
Fall time
tf
11
ns
ID = 8.5 A
VGS = 10 V
RL = 8.8
Rg = 10
Total gate charge
Qg
18
nC
Gate to source charge
Qgs
4.2
nC
Gate to drain charge
Qgd
8.3
nC
VDD = 120 V
VGS = 10 V
ID = 17 A
Body-drain diode forward voltage
VDF
0.88
1.40
V
IF = 17 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
95
ns
Body-drain diode reverse recovery
charge
Qrr
0.3
µC
IF = 17 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 4. Pulse test


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