GSS4953BDY

Page: 1/5

ISSUED DATE :2006/07/14

REVISED DATE :

G

Y

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS4953BDY provide the designer with the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited

for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0°

8°

J

0.375 REF.

E

0.40

0.90

K

45°

F

0.19

0.25

G

1.27 TYP.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-5

A

-4

A

-20

A

2

W

Linear Derating Factor

0.02

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-amb

62.5

/

: W

-30V

42m

-5A

Pb Free Plating Product