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AM27C1024-55PI5 Datasheet(PDF) 6 Page - Advanced Micro Devices |
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AM27C1024-55PI5 Datasheet(HTML) 6 Page - Advanced Micro Devices |
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6 / 12 page  6 Am27C1024 connection to all devices in the array and connected to the READ line from the system control bus. This as- sures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular mem- ory device. System Applications During the switch between active and standby condi- tions, transient current peaks are produced on the ris- ing and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the out- put capacitance loading of the device. At a minimum, a 0.1 µF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM ar- rays, a 4.7 µF bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The loca- tion of the capacitor should be close to where the power supply is connected to the array. MODE SELECT TABLE Notes: 1. VH = 12.0 V ± 0.5 V. 2. X = Either VIH or VIL. 3. A1–A8 and A10–15 = VIL 4. See DC Programming Characteristics for VPP voltage during programming. Mode CE# OE# PGM# A0 A9 VPP Outputs Read VIL VIL XX X X DOUT Output Disable X VIH X X X X High Z Standby (TTL) VIH X X X X X High Z Standby (CMOS) VCC ± 0.3 V X X X X X High Z Program VIL XVIL XX VPP DIN Program Verify VIL VIL VIH XX VPP DOUT Program Inhibit VIH XX X X VPP High Z Autoselect (Note 3) Manufacturer Code VIL VIL VIH VIL VH X01h Device Code VIL VIL VIH VIH VH X8Ch |
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