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TEA1205AT Datasheet(PDF) 8 Page - NXP Semiconductors

No. de pieza TEA1205AT
Descripción Electrónicos  High efficiency DC/DC converter
Download  16 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA1205AT Datasheet(HTML) 8 Page - NXP Semiconductors

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1998 Mar 24
8
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω series resistor.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality
Reference Handbook”. The handbook can be ordered using the code 9397 750 00192.
CHARACTERISTICS
Tj = −20 to +80 °C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Vn
voltage on any pin
shut-down mode
−0.2
+6.5
V
operational mode
−0.2
+5.9
V
Tj
junction temperature
−25
+150
°C
Tamb
operating ambient temperature
−40
+80
°C
Tstg
storage temperature
−65
+125
°C
Ves
electrostatic handling
note 1
−3000
+3000
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VO
output voltage
VSEL = LOW
5.23
5.55
5.85
V
VSEL = HIGH
3.13
3.34
3.54
V
Vstart
start-up voltage
1.6
2.0
2.2
V
Efficiency
η
efficiency
up from 2.4 to 3.3 V
1 mA < IL < 1.0 A
8090
95%
up from 3.6 to 5.5 V
1 mA < IL < 1.0 A
8390
94%
Current levels
Iq
quiescent current at pin 3
50
60
70
µA
ISHDWN
shut-down current
210
µA
IlimN
NFET current limit
note 1
0.9 Ilim
Ilim
1.1 Ilim
A
Ilx
max. continuous current at pin 5
−−
1.0
A
Power MOSFETS
RdsON(N)
pin-to-pin resistance NFET
0.08
0.12
0.20
RdsON(P)
pin-to-pin resistance PFET
0.10
0.16
0.25


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