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TEA1205AT Datasheet(PDF) 8 Page - NXP Semiconductors |
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TEA1205AT Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1998 Mar 24 8 Philips Semiconductors Preliminary specification High efficiency DC/DC converter TEA1205AT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k Ω series resistor. THERMAL CHARACTERISTICS QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality Reference Handbook”. The handbook can be ordered using the code 9397 750 00192. CHARACTERISTICS Tj = −20 to +80 °C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vn voltage on any pin shut-down mode −0.2 +6.5 V operational mode −0.2 +5.9 V Tj junction temperature −25 +150 °C Tamb operating ambient temperature −40 +80 °C Tstg storage temperature −65 +125 °C Ves electrostatic handling note 1 −3000 +3000 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 150 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VO output voltage VSEL = LOW 5.23 5.55 5.85 V VSEL = HIGH 3.13 3.34 3.54 V Vstart start-up voltage 1.6 2.0 2.2 V Efficiency η efficiency up from 2.4 to 3.3 V 1 mA < IL < 1.0 A 8090 95% up from 3.6 to 5.5 V 1 mA < IL < 1.0 A 8390 94% Current levels Iq quiescent current at pin 3 50 60 70 µA ISHDWN shut-down current − 210 µA IlimN NFET current limit note 1 0.9 Ilim Ilim 1.1 Ilim A Ilx max. continuous current at pin 5 −− 1.0 A Power MOSFETS RdsON(N) pin-to-pin resistance NFET 0.08 0.12 0.20 Ω RdsON(P) pin-to-pin resistance PFET 0.10 0.16 0.25 Ω |
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