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TEA1206 Datasheet(PDF) 9 Page - NXP Semiconductors |
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TEA1206 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 16 page 1999 Sep 16 9 Philips Semiconductors Preliminary specification High efficiency DC/DC converter TEA1206T CHARACTERISTICS Tj = −40 to +80 °C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Voltage levels VO(up) output voltage range in up mode U/D = LOW 2.80 − 5.50 V VO(down) output voltage range in down mode U/D = HIGH 1.25 − 5.50 V Vi(up) input voltage range in up mode U/D = LOW Vstart − 5.50 V Vi(down) input voltage range in down mode U/D = HIGH; note 1 2.80 − 5.50 V Vstart start-up voltage up mode; IL < 200 mA 1.40 1.60 1.85 V Vfb feedback voltage level 1.19 1.24 1.29 V Vwdw output voltage window spread PWM mode; see Fig.4 1.5 2.0 3.0 % Vuvlo undervoltage lockout level up mode; note 2 1.50 2.10 2.50 V Current levels Iq quiescent current at pin 3 V3 = 3.6 V; note 3 65 75 85 µA Ishdwn shut-down current − 210 µA IlimN current limit NFET up mode; note 4 0.5 − 5.0 A IlimP current limit PFET down mode; note 4 0.5 − 5.0 A ILx maximum continuous current at pin 4 −− 1.0 A Power MOSFETS RdsON(N) pin-to-pin resistance NFET 0.08 0.14 0.20 Ω RdsON(P) pin-to-pin resistance PFET 0.10 0.16 0.25 Ω Efficiency; see Fig.5 η efficiency Vi = 3.6 V; note 5 −−− Vi = 3.6 up to 4.6 V IL =1mA − 86 − % IL =10mA − 93 − % IL =50mA − 93 − % IL = 100 mA − 93 − % IL = 500 mA − 93 − % IL = 1000 mA; pulsed load current − 87 − % Vi = 3.6 down to 1.8 V IL =1mA − 83 − % IL =10mA − 90 − % IL =50mA − 91 − % IL = 100 mA − 87 − % IL = 500 mA − 88 − % IL = 1000 mA; pulsed load current − 82 − % Timing fsw switching frequency PWM mode 475 560 645 kHz fsync sync input frequency 9 13 20 MHz tres response time from standby to Pmax − 25 −µs |
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