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TEA1401T Datasheet(PDF) 10 Page - NXP Semiconductors |
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TEA1401T Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 20 page 1997 Mar 07 10 Philips Semiconductors Preliminary specification Power plug for the universal mains TEA1401T Pulse (maximum) frequency modulator Rdischarge discharge resistance to ground VCPFM = 1.0 V 0.3 0.6 0.9 k Ω Icharge(min) minimum charge current VCV =VCI =0V − 2.5 −µA Icharge(max) maximum charge current VCV =VCI =4V − 130 −µA Icharge(fix) fixed charge current active stroke − 25 −µA GtransferCI transfer from pin CI to pin CPFM VCI = 2.1 to 3.1 V −−104 −µA/V GtransferCV transfer from pin CV to pin CPFM VCV = 2.1 to 3.1 V −−104 −µA/V Vsw(high) high switching voltage level at pin CPFM − 1.0 − V Vsw(low) low switching voltage level at pin CPFM DC at pin CPFM − 0.17 − V Vton(max) maximum on-time ton(max) switching voltage level at pin CPFM − 0.54 − V ∆fPFM frequency spread of the internal oscillator; ; VCI =VCV = 2.1 to 3.1 V 93 104 115 µA/V2 ∆ton(max) spread of ton(max); VCI =VCV =4V; VSOURCE <1V 19 22 25 V/mA SOPS Vdemag demagnetization recognition voltage level −250 −130 −10 mV Current regulation Vi(pkc) VPEAK-I converter input voltage 0.6 − 1.4 V Vi(pkc)(slope) VPEAK-I converter input voltage slope 0.1 − 1.0 V/ µs Vpkc(offset) VPEAK-I converter systematic offset −−13 − mV Itransfer(RI-CI) RI to CI current transfer IGOUT =0 −−0.99 − A/A Itransfer(GOUT-CI) GOUT to CI current transfer IRI =0 − 0.17 − A/A IPEAKcor current through sense capacitor in block ‘IPEAK correction’ (see Fig.1); sunk by pin FOLDBACK under test conditions: in lasting active stroke 710 13 µA Ichain(CI) CI chain error current −3.3 −1.0 +1.3 µA Ictrl(error) current control total measured error −5 − +5 % SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G transferCI V sw(high) ------------------------ G transferCV V sw(high) -------------------------- V ton(max) I charge(fix) ----------------------- dV SOURCE dt --------------------------- 0.1 V/ µs > |
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