2SK2625ALS

No. A0359-1/5

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENA0359A

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

's products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

22107 TI IM TC-00000530 / 72006QB MS IM TC-00000029

SANYO Semiconductors

DATA SHEET

2SK2625ALS

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

•

Low ON-resistance.

•

Low Qg.

•

Ultrahigh-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

600

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

IDc*1

Limited only by maximum temperature

5

A

IDpack*2

SANYO’s ideal heat dissipation condition

4.4

A

Drain Current (Pulse)

IDP

PW≤10µs, duty cycle≤1%

16

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C (SANYO’s ideal heat dissipation condition)

30

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *3

EAS

87

mJ

Avalanche Current *4

IAV

4A

*1 Shows chip capability

*2 Package limited

*3 VDD=50V, L=10mH, IAV=4A

*4 L≤10mH, single pulse

Marking : K2625