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FW216 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza FW216
Descripción Electrónicos  N-Channel Silicon MOSFET General-Purpose Switching Device
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW216 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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FW216
No. A0074-2/4
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID=3.5A
RL=4.3Ω
VDD=15V
VOUT
FW216
VIN
10V
0V
VIN
14
5
8
5.0
0.595
1.27
0.2
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
ID -- VDS
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
0.5
1.0
2.0
1.5
3.0
2.5
3.5
0
0
0.4
0.5
0.7
0.9
0.8
1.0
0.2
0.1
0.3
0.6
VGS=2.5V
IT10125
0123456
IT10126
3.0V
VDS=10V
50
150
200
100
250
300
--60
--40
--20
0
20
40
60
80
100
120
160
140
24
3
6
8
101214
5
7
9
11
13
15
16
IT10127
0
50
150
100
200
250
300
IT10128
0
Ta=25
°C
I D=2.0A,
V GS
=4.5V
ID=2.0A
3.5A
ID=3.5A,
VGS
=10.0V
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=3.5A
6
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=3.5A
1.2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=3.5A
1.0
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
0.88
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
7005-003


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