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BDV64 Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BDV64 Datasheet(HTML) 2 Page - Power Innovations Ltd |
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2 / 6 page  BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS 2 JUNE 1993 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA IB = 0 (see Note 4) BDV64 BDV64A BDV64B BDV64C -60 -80 -100 -120 V ICEO Collector-emitter cut-off current VCB = -30 V VCB = -40 V VCB = -50 V VCB = -60 V IB = 0 IB = 0 IB = 0 IB = 0 BDV64 BDV64A BDV64B BDV64C -2 -2 -2 -2 mA ICBO Collector cut-off current VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V VCB = -30 V VCB = -40 V VCB = -50 V VCB = -60 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C -0.4 -0.4 -0.4 -0.4 -2 -2 -2 -2 mA IEBO Emitter cut-off current VEB = -5 V IC = 0 -5 mA hFE Forward current transfer ratio VCE = -4 V IC = -5 A (see Notes 4 and 5) 1000 VCE(sat) Collector-emitter saturation voltage IB = -20 mA IC = -5 A (see Notes 4 and 5) -2 V VBE Base-emitter voltage VCE = -4 V IC = -5 A (see Notes 4 and 5) -2.5 V VEC Parallel diode forward voltage IE = -10 A IB = 0 (see Notes 4 and 5) -3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W |
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