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SI3215M-GT Datasheet(PDF) 5 Page - Silicon Laboratories |
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SI3215M-GT Datasheet(HTML) 5 Page - Silicon Laboratories |
5 / 118 page Si3215 Rev. 0.92 5 Table 2. Recommended Operating Conditions Parameter Symbol Test Condition Min* Typ Max* Unit Ambient Temperature TA K-grade 0 25 70 oC Ambient Temperature TA B-grade –40 25 85 oC Si3215 Supply Voltage VDDD,VDDA1, VDDA2 3.13 3.3/5.0 5.25 V Si3201 Supply Voltage VDD 3.13 3.3/5.0 5.25 V Si3201 Battery Voltage VBAT VBATH =VBAT –96 — –10 V *Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 oC unless otherwise stated. Product specifications are only guaranteed when the typical application circuit (including component tolerances) is used. Table 3. AC Characteristics (VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade) Parameter Test Condition Min Typ Max Unit TX/RX Performance Overload Level THD = 1.5% 2.5 — — VPK Single Frequency Distortion1 2-wire – PCM or PCM – 2-wire: 200 Hz–3.4 kHz —— –45 dB Signal-to-(Noise + Distortion) Ratio2 200 Hz to 3.4 kHz D/A or A/D 8-bit Active off-hook, and OHT, any ZAC Figure 1 — — Audio Tone Generator Signal-to-Distortion Ratio2 0 dBm0, Active off-hook, and OHT, any Zac 45 — — dB Intermodulation Distortion — — –45 dB Gain Accuracy2 2-wire to PCM, 1014 Hz –0.5 0 0.5 dB PCM to 2-wire, 1014 Hz –0.5 0 0.5 dB Gain Accuracy Over Frequency Figure 3,4 — — Group Delay Over Frequency Figure 5,6 — — Gain Tracking3 1014 Hz sine wave, refer- ence level –10 dBm signal level: 3 dB to –37 dB –0.25 — 0.25 dB –37 dB to –50 dB –0.5 — 0.5 dB –50 dB to –60 dB –1.0 — 1.0 dB Round-Trip Group Delay at 1000 Hz — 1100 — µs Gain Step Accuracy –6 dB to 6 dB –0.017 — 0.017 dB Gain Variation with Temperature All gain settings –0.25 — 0.25 dB Gain Variation with Supply VDDA =VDDA = 3.3/5 V ±5% –0.1 — 0.1 dB |
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