SI7900AEDN datasheet(1/5 Pages) VISHAY

No. de pieza	SI7900AEDN

Descripción Electrónicos	Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

D New PowerPakr Package

- Low-Thermal Resistance, RthJC

- Low 1.07-mm Profile

D 3000-V ESD Protection

APPLICATIONS

D Protection Switch for 1-2 Li-ion Batteries

Si7900AEDN

Vishay Siliconix

New Product

Document Number: 72287

S-31418—Rev. A, 07-Jun-03

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET, Common Drain

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.026 @ VGS = 4.5 V

8.5

20

0.030 @ VGS = 2.5 V

8

0.036 @ VGS = 1.8 V

7

D

G1

S1

D

G2

S2

N-Channel

2.6 kW

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7900AEDN-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

8.5

6

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

6.4

4.3

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)a

IS

2.9

1.4

Maximum Power Dissipationa

TA = 25_C

PD

3.1

1.5

W

Maximum Power Dissipationa

TA = 85_C

PD

1.6

0.79

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

32

40

Maximum Junction-to-Ambienta

Steady State

RthJA

65

82

_C/W

Maximum Junction-to-Case

Steady State

RthJC

2.2

2.8

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

Número de pieza similar - SI7900AEDN

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