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TICP206 Datasheet(PDF) 1 Page - Power Innovations Ltd

No. de pieza TICP206
Descripción Electrónicos  SILICON TRIACS
Download  7 Pages
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Fabricante Electrónico  POINN [Power Innovations Ltd]
Página de inicio  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TICP206 Datasheet(HTML) 1 Page - Power Innovations Ltd

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TICP206 SERIES
SILICON TRIACS
PRODUCT
INFORMATION
1
MARCH 1988 - REVISED MARCH 1997
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1997, Power Innovations Limited, UK
q
1.5 A RMS
q
Glass Passivated Wafer
q
400 V to 600 V Off-State Voltage
q
Max IGT of 10 mA
q
Package Options
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
LP PACKAGE
(TOP VIEW)
MDC2AA
G
MT2
MT1
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MDC2AB
MT2
MT1
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP206D
TICP206M
VDRM
400
600
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
IT(RMS)
1.5
A
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
10
A
Peak on-state surge current half-sine-wave (see Note 4)
ITSM
12
A
Peak gate current
IGM
±0.2
A
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
TL
230
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDRM
Repetitive peak off-
state current
VD = rated VDRM
IG = 0
±20
µA
IGTM
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
8
-8
-8
10
mA
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
2.5
-2.5
-2.5
2.5
V
† All voltages are with respect to Main Terminal 1.


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