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STP4N150 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STP4N150
Descripción Electrónicos  N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4N150 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP4N150 - STW4N150
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 1 mA, VGS = 0
1500
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
± 100
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
34
5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 2 A
57
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 30 V , ID = 2 A
3.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
1300
120
12
pF
pF
pF
Td(on)
Tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 750 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
35
30
45
45
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 600 V, ID = 4 A,
VGS = 10 V
(see Figure 19)
30
10
9
50
nC
nC
nC


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