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TIP2955 Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TIP2955 Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page TIP2955 PNP SILICON POWER TRANSISTOR 2 JANUARY 1972 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA IB = 0 (see Note 5) -60 V ICEO Collector cut-off current VCE = -30 V IB = 0 -0.7 mA ICEV Voltage between base and emitter VCE = -100 V VBE = 1.5 V -5 mA IEBO Emitter cut-off current VEB = -7 V IC = 0 -5 mA hFE Forward current transfer ratio VCE = -4 V VCE = -4 V IC = -4 A IC = -10 A (see Notes 5 and 6) 20 5 70 VCE(sat) Collector-emitter saturation voltage IB = -0.4 A IB = -3.3 A IC = -4 A IC = -10 A (see Notes 5 and 6) -1.1 -3 V VBE Base-emitter voltage VCE = -4 V IC = -4 A (see Notes 5 and 6) -1.8 V hfe Small signal forward current transfer ratio VCE = -10 V IC = -0.5 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = -10 V IC = -0.5 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.39 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -6 A VBE(off) = 4 V IB(on) = -0.6 A RL = 5 Ω IB(off) = 0.6 A tp = 20 µs, dc ≤ 2% 0.4 µs toff Turn-off time 0.7 µs |
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