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STP10NK80Z Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP10NK80Z
Descripción Electrónicos  N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10NK80Z Datasheet(HTML) 5 Page - STMicroelectronics

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Electrical characteristics
5/15
Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
30
20
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
65
17
ns
ns
Table 7.
Gate-source zener diode
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-Source Breakdown
Voltage
Igs=±1mA
(Open Drain)
30
V
Table 8.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
Source-drain current
9
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
36
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=9A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A,
di/dt = 100A/µs,
VDD=45V, Tj=150°C
645
6.4
20
ns
µC
A


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