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TIPP32 Datasheet(PDF) 1 Page - Power Innovations Ltd

No. de pieza TIPP32
Descripción Electrónicos  PNP SILICON POWER TRANSISTORS
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Fabricante Electrónico  POINN [Power Innovations Ltd]
Página de inicio  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPP32 Datasheet(HTML) 1 Page - Power Innovations Ltd

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TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
PRODUCT
INFORMATION
1
MAY 1989 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
20 W Pulsed Power Dissipation
q
100 V Capability
q
2 A Continuous Collector Current
q
4 A Peak Collector Current
q
Customer-Specified Selections Available
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
TIPP32
TIPP32A
TIPP32B
TIPP32C
VCBO
-40
-60
-80
-100
V
Collector-emitter voltage (IB = 0)
TIPP32
TIPP32A
TIPP32B
TIPP32C
VCEO
-40
-60
-80
-100
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
IC
-2
A
Peak collector current (see Note 1)
ICM
-4
A
Continuous base current
IB
-1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
0.8
W
Pulsed power dissipation (see Note 3)
PT
20
W
Operating junction temperature range
Tj
-55 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C


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