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TSM1N60SCTA3 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM1N60SCTA3
Descripción Electrónicos  N-Channel Power Enhancement Mode MOSFET
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM1N60SCTA3 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM1N60S
1-4
2006/01 rev. A
TSM1N60S
N-Channel Power Enhancement Mode MOSFET
VDS = 600V
ID = 0.3A
RDS (on), Vgs @ 10V, Ids @ 0.3A = 11Ω
General Description
The TSM1N60s is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies and converters, these devices are
particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
IDSS and VDS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM1N60SCT B0
Bulk Pack
TO-92
TSM1N60SCT A3
Ammo Pack
TO-92
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600V
V
Gate-Source Voltage
VGS
± 30
V
Continuous Drain Current
ID
0.3
A
Pulsed Drain Current
IDM
1.2
A
Ta = 25
oC
3
W
Maximum Power Dissipation
Ta > 25
oC
PD
0.025
W/
oC
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
oC
Single Pulse Drain to Source Avalanche Energy
(VDD = 50V, VGS=10V, IAS=0.3A, L=115mH)
EAS
50
mJ
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
TL
10
S
Junction to Ambient Thermal Resistance (PCB mounted)
Rθja
50
oC/W
Note: Surface mounted on FR4 board t<=10sec.
Pin assignment:
1. Gate
2. Drain
3. Source


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