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TSM1N60SCTA3 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM1N60SCTA3 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSM1N60S 1-4 2006/01 rev. A TSM1N60S N-Channel Power Enhancement Mode MOSFET VDS = 600V ID = 0.3A RDS (on), Vgs @ 10V, Ids @ 0.3A = 11Ω General Description The TSM1N60s is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies and converters, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. Packing Package TSM1N60SCT B0 Bulk Pack TO-92 TSM1N60SCT A3 Ammo Pack TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600V V Gate-Source Voltage VGS ± 30 V Continuous Drain Current ID 0.3 A Pulsed Drain Current IDM 1.2 A Ta = 25 oC 3 W Maximum Power Dissipation Ta > 25 oC PD 0.025 W/ oC Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Single Pulse Drain to Source Avalanche Energy (VDD = 50V, VGS=10V, IAS=0.3A, L=115mH) EAS 50 mJ Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 10 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 50 oC/W Note: Surface mounted on FR4 board t<=10sec. Pin assignment: 1. Gate 2. Drain 3. Source |
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