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FDG8842CZ Datasheet(PDF) 3 Page - Fairchild Semiconductor

No. de pieza FDG8842CZ
Descripción Electrónicos  Complementary PowerTrench짰 MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG8842CZ Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Electrical Characteristics T
J = 25°C unless otherwise noted
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
0.3
–0.3
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 0.3A
(Note 2)
VGS = 0V, IS = –0.3A
(Note 2)
Q1
Q2
0.76
–0.84
1.2
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
a. 350°C/W when mounted on a
1 in2 pad of 2 oz copper .
b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
Scale 1:1 on letter size paper.


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