AMMC-6430 datasheet(2/7 Pages) AVAGO

No. de pieza	AMMC-6430

Descripción Electrónicos	25 - 33 GHz Power Amplifier

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Fabricante Electrónico	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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Gain at 29 GHz

AMMC-6430 DC Specifications/Physical Properties [1]

Notes:

1. AmbientoperationaltemperatureTA=25°Cunlessotherwisenoted.

2. Channel-to-backsideThermalResistance(θch-b)=10°C/WatTchannel(Tc)=107°Casmeasuredusinginfraredmicroscopy.ThermalResistance

atbacksidetemperature(Tb)=25°Ccalculatedfrommeasureddata.

Notes:

3. Small/Large-signaldatameasuredinwaferformTA=25°C.

4. 100%on-waferRFtestisdoneatfrequency=27,29,and32GHz.Statisticsbasedon1500partsample

5. Specificationsarederivedfrommeasurementsina50Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera

morenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching.

AMMC-6430 RF Specifications [3, 4, 5]

TA=25°C,Vd=5.5V,Id(Q)=900mA,Zo=50Ω

TypicaldistributionofSmallSignalGainandOutputPower@P-1dB.Basedon1500partsampledoverseveralpro-

ductionlots.

P-1dB at 33 GHz

P-1dB at 29 GHz

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Id

DrainSupplyCurrent

(underanyRFpowerdriveandtemperature)

(Vd=5.0V,VgsetforIdTypical)

mA

900

1000

Vg

GateSupplyOperatingVoltage

(Id(Q)=900(mA))

V

-0.9

-0.7

-0.55

qch-b

ThermalResistance[2]

(Backsidetemperature,Tb=25°C)

°C/W

9

Symbol

Parameters and Test

Conditions

Units

Minimum

Typical

Maximum

Sigma

Gain

Small-signalGain[4]

dB

14

17

0.5

P-1dB

OutputPowerat1dB

GainCompression

dBm

27

28.5

0.38

P-3dB

OutputPowerat3dB

GainCompression

dBm

29

0.35

OIP3

ThirdOrderIntercept

Point;

Df=100MHz;

Pin=-20dBm

dBm

37

0.8

RLin

InputReturnLoss[4]

dB

-15

0.92

RLout

OutputReturnLoss[4]

dB

-15

0.63

Isolation

Min.ReverseIsolation

dB

-43

1.8

LSL

1 1. 1 1. 1 1. 1 1. 18 18.

LSL

8

9

LSL

8

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