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AMMC-6420 Datasheet(PDF) 5 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-6420 Datasheet(HTML) 5 Page - AVAGO TECHNOLOGIES LIMITED |
5 / 8 page 5 Biasing and Operation TherecommendedquiescentDCbiasconditionforop- timumefficiency,performance,andreliabilityisVd=5.5 voltswithVgsetforId=800mA.Minorimprovementsin performancearepossibledependingontheapplication. Thedrainbiasvoltagerangeis3to5.5V.AsingleDCgate supplyconnectedtoVgwillbiasallgainstages.Muting canbeaccomplishedbysettingVgtothepinch-offvolt- ageVp(-1.0V). An optional output power detector network is also provided.The differential voltage between the Det-Ref andDet-OutpadscanbecorrelatedwiththeRFpower emergingfromtheRFoutputport.Thedetectedvoltage isgivenby: ( ) ofs ref V V V V − − = det where ref V isthevoltageatthe R DET _ port, det V isavoltage atthe O DET _ port,and ofs V isthezero-input-poweroffset voltage.Therearethreemethodstocalculate: 1. ofs V canbemeasuredbeforeeachdetectormeasure- ment(byremovingorswitchingoffthepowersource andmeasuring).Thismethodgivesanerrordueto temperaturedriftoflessthan0.01dB/50°C. 2. ofs V canbemeasuredatasinglereferencetemperature. Thedrifterrorwillbelessthan0.25dB. 3. ofs V caneitherbecharacterizedovertemperatureand storedinalookuptable,oritcanbemeasuredattwo temperaturesandalinearfitusedtocalculateatany temperature.Thismethodgivesanerrorclosetothe method#1. TheRFportsareACcoupledattheRFinputtothefirststage andtheRFoutputofthefinalstage.Nogroundwiresare neededsincegroundconnectionsaremadewithplated through-holestothebacksideofthedevice. Assembly Techniques ThebacksideoftheMMICchipisRFground.Formicrostrip applicationsthechipshouldbeattacheddirectlytothe groundplane(e.g.circuitcarrierorheatsink)usingelectri- callyconductiveepoxy[1] Forbestperformance,thetopsideoftheMMICshouldbe broughtuptothesameheightasthecircuitsurrounding it.This can be accomplished by mounting a gold plate metalshim(samelengthandwidthastheMMIC)under thechipwhichisofcorrectthicknesstomakethechip and adjacent circuit the same height. The amount of epoxyusedforthechipand/orshimattachmentshould bejustenoughtoprovideathinfilletaroundthebottom perimeterofthechiporshim.Thegroundplainshould befreeofanyresiduethatmayjeopardizeelectricalor mechanicalattachment. ThelocationoftheRFbondpadsisshowninFigure12. NotethatalltheRFinputandoutputportsareinaGround- Signal-Groundconfiguration. RFconnectionsshouldbekeptasshortasreasonableto minimize performance degradation due to undesirable seriesinductance.Asinglebondwireisnormallysufficient forsignalconnections,howeverdoublebondingwith0.7 milgoldwireoruseofgoldmesh[2]isrecommended forbestperformance,especiallynearthehighendofthe frequencyband. Thermosonicwedgebondingispreferredmethodforwire attachmenttothebondpads.Goldmeshcanbeattached usinga2milroundtrackingtoolandatoolforceofap- proximately22gramsandaultrasonicpowerofroughly 55dBforadurationof76+/-8mS.Theguidedwedgeat anuntrasonicpowerlevelof64dBcanbeusedfor0.7mil wire.Therecommendedwirebondstagetemperatureis 150+/-2C. CautionshouldbetakentonotexceedtheAbsoluteMaxi- mumRatingforassemblytemperatureandtime. Thechipis100umthickandshouldbehandledwithcare. ThisMMIChasexposedairbridgesonthetopsurfaceand shouldbehandledbytheedgesorwithacustomcollet (donotpickupthediewithavacuumondiecenter). This MMIC is also static sensitive and ESD precautions shouldbetaken. Notes: [1] Ablebond84-1LM1silverepoxyisrecommended. [2] Buckbee-MearsCorporation,St.Paul,MN,800-262-3824 |
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