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AMMC-5620-W50 Datasheet(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED

No. de pieza AMMC-5620-W50
Descripción Electrónicos  6 - 20 GHz High Gain Amplifier
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Fabricante Electrónico  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Página de inicio  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

AMMC-5620-W50 Datasheet(HTML) 1 Page - AVAGO TECHNOLOGIES LIMITED

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Features
• Frequency Range: 6 - 20 GHz
• High Gain: 19 dB Typical
• Output Power: 15dBm Typical
• Input and Output Return Loss: < -10 dB
• Positive Gain Slope: + 0.21dB/GHz Typical
• Single Supply Bias: 5 V @ 95 mA Typical
Applications
• General purpose, wide-band amplifier in communica-
tion systems or microwave instrumentation
• High gain amplifier
Description
Avago Technologies’ AMMC-5620 MMIC is a GaAs wide-
band amplifier designed for medium output power and
high gain over the 6 - 20 GHz frequency range. The 3
cascaded stages provide high gain while the single bias
supply offers ease of use. It is fabricated using a PHEMT
integrated circuit process. The RF input and output ports
have matching circuitry for use in 50-environments.
The backside of the chip is both RF and DC ground. This
helpssimplifytheassemblyprocessandreducesassembly
related performance variations and costs. For improved
reliability and moisture protection, the die is passivated
at the active areas.The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
Note: These devices are ESD sensitive. The following precautions are strongly recommended.
Ensure that an ESD approved carrier is used when dice are transported from one destination to
another. Personal grounding is to be worn at all times when handling these devices
AMMC-5620 Absolute Maximum Ratings[1]
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Chip Size: 1410 x 1010 µm (55.5 x 39.7 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Symbol
Parameters/Conditions
Units
Min.
Max.
VDD
Drain Supply Voltage
V
7.5
IDD
Total Drain Current
mA
135
PDC
DC Power Dissipation
W
1.0
Pin
RF CW Input Power
dBm
20
Tch
Channel Temp.
° C
+150
Tb
Operating Backside Temp.
° C
- 55
Tstg
Storage Temp.
° C
- 65
+165
Tmax
Maximum Assembly Temp.
(60 sec max)
° C
+300
AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet


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