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2N5550 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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2N5550 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 2N5550 / 2N5551 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5550 VBEsat VBEsat – – – – 1.0 V 1.2 V IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5551 VBEsat VBEsat – – – – 1.0 V 1.0 V Collector-Base cutoff current – Kollektor-Base-Reststrom VCB = 100 V, (E open) VCB = 120 V, (E open) 2N5550 2N5551 ICBO ICBO – – – – 100 nA 50 nA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 4 V, (C open) IEBO – – 50 nA Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz fT 100 MHz – 300 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO –– 6 pF Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30 Hz ... 15 kHz 2N5550 2N5551 F F – – – – 10 dB 8 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2N5400 / 2N5401 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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