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2N5550 Datasheet(PDF) 2 Page - Diotec Semiconductor

No. de pieza 2N5550
Descripción Electrónicos  General Purpose Si-Epitaxial Planar Transistors
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

2N5550 Datasheet(HTML) 2 Page - Diotec Semiconductor

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2N5550 / 2N5551
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5550
VBEsat
VBEsat
1.0 V
1.2 V
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5551
VBEsat
VBEsat
1.0 V
1.0 V
Collector-Base cutoff current – Kollektor-Base-Reststrom
VCB = 100 V, (E open)
VCB = 120 V, (E open)
2N5550
2N5551
ICBO
ICBO
100 nA
50 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open)
IEBO
50 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz
fT
100 MHz
300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
––
6 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
2N5550
2N5551
F
F
10 dB
8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2N5400 / 2N5401
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1


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