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CAT93C76YI-GT2 Datasheet(PDF) 1 Page - Catalyst Semiconductor |
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CAT93C76YI-GT2 Datasheet(HTML) 1 Page - Catalyst Semiconductor |
1 / 13 page CAT93C76 (Rev. A) © Catalyst Semiconductor, Inc. 1 Doc. No. MD-1090 Rev. B Characteristics subject to change without notice 8K-Bit Microwire Serial EEPROM FEATURES High speed operation: 3MHz @ VCC ≥ 2.5V Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear Software write protection Power-up inadvertant write protection 1,000,000 Program/erase cycles 100 year data retention Industrial and extended temperature ranges Sequential read “Green” package option available PIN CONFIGURATION PDIP (L), SOIC (V) TSSOP (Y), TDFN (ZD4) CS 1 8 VCC SK 2 7 NC DI 3 6 ORG DO 4 5 GND PIN FUNCTION Pin Name Function CS Chip Select SK Serial Clock Input DI Serial Data Input DO Serial Data Output VCC Power Supply GND Ground ORG Memory Organization NC No Connection Note: When the ORG pin is connected to VCC, x16 organization is selected. When it is connected to ground, x8 organization is selected. If the ORG pin is left unconnected, then an internal pull-up device will select x16 organization. DESCRIPTION The CAT93C76 is an 8K-bit Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76 is manufactured using Catalyst’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8-pin PDIP, SOIC, TSSOP and 8-pad TDFN packages. FUNCTIONAL SYMBOL For Ordering Information details, see page 12. CS SK ORG DO DI VCC GND |
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