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PZT2222 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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PZT2222 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page PZT2222 / PZT2222A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VBEsat VBEsat – – – – 1.3 V 1.2 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VBEsat VBEsat – – – – 2.6 V 2.0 V DC current gain – Kollektor-Basis-Stromverhältnis IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V 2) hFE hFE hFE hFE 35 50 75 100 – – – – – – – 300 IC = 500 mA, VCE = 10 V 2) PZT2222 PZT2222A hFE hFE 30 40 – – – – Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz fT 200 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf Switching times – Schaltzeiten delay time rise time storage time fall time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA td – – 10 ns tr – – 25 ns ts – – 225 ns tf – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren PZT2907, PZT2907A 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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