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PZT2222 Datasheet(PDF) 2 Page - Diotec Semiconductor

No. de pieza PZT2222
Descripción Electrónicos  Suface Mount Si-Epitaxial Planar Switching Transistors
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

PZT2222 Datasheet(HTML) 2 Page - Diotec Semiconductor

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PZT2222 / PZT2222A
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
PZT2222
PZT2222A
VBEsat
VBEsat
1.3 V
1.2 V
IC = 500 mA, IB = 50 mA
PZT2222
PZT2222A
VBEsat
VBEsat
2.6 V
2.0 V
DC current gain – Kollektor-Basis-Stromverhältnis
IC = 0.1 mA, VCE = 10 V
IC = 1 mA,
VCE = 10 V
IC = 10 mA,
VCE = 10 V
IC = 150 mA, VCE = 10 V 2)
hFE
hFE
hFE
hFE
35
50
75
100
300
IC = 500 mA, VCE = 10 V 2)
PZT2222
PZT2222A
hFE
hFE
30
40
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT
200 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
30 pf
Switching times – Schaltzeiten
delay time
rise time
storage time
fall time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
td
10 ns
tr
25 ns
ts
225 ns
tf
60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 93 K/W 1)
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
RthS
< 27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
PZT2907, PZT2907A
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


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