TC1550

Features

500V breakdown voltage

Independent N- and P-channels

Electrically isolated N- and P-channels

Low input capacitance

Fast switching speeds

Free from secondary breakdowns

Low input and output leakage

Applications

High voltage pulsers

Amplifiers

Buffers

Piezoelectric transducer drivers

General purpose line drivers

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General Description

The Supertex TC1550TG-G consists of a high voltage N-

channel and P-channel MOSFET in an SO-8 package.

These are enhancement-mode (normally-off) transistors

utilizing

an

advanced

vertical

DMOS

structure

and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces devices with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

N- and P-Channel

Enhancement-Mode Dual MOSFET

Typical Application Circuit

Supertex

MD1210K6

GND

OUTA

OUTB

INA

INB

OE

0.47µF

+12V

3.3V CMOS

Logic Inputs

Supertex

TC1550TG

+250V

-250V

Piezoelectric

Transducer

10nF

250V

10nF

250V

15V

15V