2N3500L datasheet(1/2 Pages) SEMICOA

No. de pieza	2N3500L

Descripción Electrónicos	Silicon NPN Transistor

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Fabricante Electrónico	SEMICOA [Semicoa Semiconductor]

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2N3500L

Silicon NPN Transistor

Dat a Sheet

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N3500LJ)

• JANTX level (2N3500LJX)

• JANTXV level (2N3500LJV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Applications

• General purpose

• Low power

• NPN silicon transistor

Features

• Hermetically sealed TO-5 metal can

• Also available in chip configuration

• Chip geometry 5620

• Reference document:

MIL-PRF-19500/366

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Absolute Maximum Ratings

TC = 25°C unless otherwise specified

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

150

Volts

Collector-Base Voltage

VCBO

150

Volts

Emitter-Base Voltage

VEBO

6

Volts

Collector Current, Continuous

IC

300

mA

Power Dissipation, TA = 25

OC

Derate linearly above 25

OC

PT

1

5.71

W

mW/

°C

Thermal Resistance

RθJA

175

°C/W

Operating Junction Temperature

TJ

-65 to +200

°C

Storage Temperature

TSTG

-65 to +200

°C

Copyright

Semicoa

Rev. H.2

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

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www.SEMICOA.com

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