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AD8178ABPZ1 Datasheet(PDF) 7 Page - Analog Devices |
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AD8178ABPZ1 Datasheet(HTML) 7 Page - Analog Devices |
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7 / 40 page  AD8178 Rev. 0 | Page 7 of 40 ABSOLUTE MAXIMUM RATINGS Table 12. Parameter Rating Analog Supply Voltage (VPOS – VNEG) 6 V Digital Supply Voltage (VDD – DGND) 6 V Ground Potential Difference (VNEG – DGND) +0.5 V to –2.5 V Maximum Potential Difference (VDD – VNEG) 8 V Common-Mode Analog Input Voltage (VNEG – 0.5 V) to (VPOS + 0.5 V) Differential Analog Input Voltage ±2 V Digital Input Voltage VDD Output Voltage (Disabled Analog Output) (VPOS – 1 V) to (VNEG + 1 V) Output Short-Circuit Duration Momentary Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θ JA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 13. Thermal Resistance Package Type θJA Unit PBGA 15 °C/W POWER DISSIPATION The AD8178 is operated with ±2.5 V or +5 V supplies and can drive loads down to 100 Ω, resulting in a large range of possible power dissipations. For this reason, extra care must be taken when derating the operating conditions based on ambient temperature. Packaged in a 676-lead BGA, the AD8178 junction-to-ambient thermal impedance (θJA) is 15°C/W. For long-term reliability, the maximum allowed junction temperature of the die should not exceed 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. The curve in Figure 4 shows the range of allowed internal die power dissipations that meet these conditions over the −40°C to +85°C ambient temperature range. When using Table 13, do not include external load power in the maximum power calculation, but do include load current dropped on the die output transistors. AMBIENT TEMPERATURE (°C) 3 4 5 6 7 8 9 10 15 25 35 45 55 65 75 85 TJ = 150°C Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature ESD CAUTION |
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