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3EZ6.8 Datasheet(PDF) 3 Page - Pan Jit International Inc.

No. de Pieza. 3EZ6.8
Descripción  GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
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Fabricante  PANJIT [Pan Jit International Inc.]
Página de inicio  http://www.panjit.com.tw
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3EZ6.8 Datasheet(HTML) 3 Page - Pan Jit International Inc.

   
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PAGE . 3
REV.0-JUN.9.2005
APPLICATION NOTE:
Since t he actual voltage available from a g iven zener diode is temperature d ependent, i t i s n ecessary to determinejunction
temperature u nder any s et of operating conditions in order to calculate i ts value. The f ollowing procedure i s r ecommended:
Lead Te mperature, T , should be determined from:
T= L A P + T
L i s t he lead-to-ambient thermal r esistance ( C/W) and P d i s t he power dissipation. The v alue for L will vary and d epends
on the d evice m ounting method.
L i s g enerally 30-40 C /W for t he various clips and t ie points i n c ommon u se and f or printed
circuit board w iring.
The t emperature o f t he lead can a lso b e m easured using a t hermocouple placed on the l ead as close a s p ossible to the t ie poi n
The t hermal m ass c onnected t o t he tie p oint is normally large e nough so that it will not s ignificantly respond to heat surges
generated in the d iode as a r esult of pulsed operation once steady-state c onditions are achieved. Using the m easured value of
TL, t he junction temperature m ay be determined by:
T= T + T
T
i s t he increase i n j unction temperature a bove t he lead temperature a nd may b e f ound from Figure 2 f or a t rain of power puls
or from Figure 1 0 f or dc power.
T= J P
For w orst-case design, using expected l imits o f I , l imits o f P and the e xtremes o f T ( T ) m ay be estimated. Changes in volta
V , can t hen be found from:
V= V
T
V , the z ener voltage temperature c oefficient, i s f ound from Figures 5 a nd 6.
Under high power-pulse o peration, the z ener voltage will vary with time and m ay also be affected significantly by the z ener resis
For b est r egulation, keep current excursions as low a s p ossible.
Data o f F igure 2 s hould not b e u sed t o c ompute s urge capa-bility. Surge l imitations are given i n F igure 3 . T hey are lower than w
be expected b y c onsidering only junction temperature, as current crowding effects c ause t emperatures to be extremely high in s
spots r esulting in device degradation should the l imits o f F igure 3 b e e xceeded.
L
LD
A
A
A
A
JL
JL
JL
Z
q
q
q
q
D
D
Dq
D
Dq
D
q
O
O
JL
L
D
ZD
J
J
Z
ZJ
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