2SA1625 datasheet(1/1 Pages) TEL

No. de pieza	2SA1625

Descripción Electrónicos	Plastic-Encapsulated Transistors

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Fabricante Electrónico	TEL [TRANSYS Electronics Limited]

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TO-92 Plastic-Encapsulated Transistors

2SA1625 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM

: 750

mW (Tamb=25

℃)

Collector current

ICM

: -0.5

A

Collector-base voltage

V(BR)CBO : -400

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

-100µA, IE=0

-400

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

-1mA, IB=0

-400

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-7

V

Collector cut-off current

ICBO

VCB=-400V, IE=0

-1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-1

µA

DC current gain

hFE(1)

VCE=-5V, IC=-50mA

40

200

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB=-10mA

-1

V

Base-emitter saturation voltage

VBE(sat)

IC=-100mA, IB=-10mA

-1.2

V

Transition frequency

fT

VCE=-10V, IC=-10mA

10

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

20

40

pF

Turn-on Time

ton

1

µs

Storage Time

tstg

5

µs

Fall-Time

tf

VCC=-150V, Ic=-100mA,

IB!=IB2-10mA, RL=1.5K

Ω

1

µs

CLASSIFICATION OF

hFE(1)

Rank

M

L

K

Range

40-80

60-120

100-200

1 2 3

TO-92

1.

EMITTER

2.

COLLECTOR

3.

BASE

Transys

Electronics

LI M ITE D

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