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FDD6N50F Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD6N50F Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDD6N50F / FDU6N50F Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD6N50F FDD6N50FTM D-PAK 380mm 16mm 2500 FDD6N50F FDD6N50FTF D-PAK 380mm 16mm 2000 FDU6N50F FDU6N50FTU I-PAK - - 70 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC - 0.15 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 μA VDS = 400V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 2.75A - 1.0 1.15 Ω gFS Forward Transconductance VDS = 40V, ID = 2.75A (Note 4) -4.3 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 720 960 pF Coss Output Capacitance - 85 115 pF Crss Reverse Transfer Capacitance - 6.3 9.5 pF Qg(tot) Total Gate Charge at 10V VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) -15 19.8 nC Qgs Gate to Source Gate Charge - 4.4 - nC Qgd Gate to Drain “Miller” Charge - 6.1 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) -17 44 ns tr Turn-On Rise Time - 28.3 66.6 ns td(off) Turn-Off Delay Time - 33.4 76.7 ns tf Turn-Off Fall Time - 20.5 51 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5.5A - - 1.5 V trr Reverse Recovery Time VGS = 0V, ISD = 5.5A dIF/dt = 100A/μs (Note 4) -85 - ns Qrr Reverse Recovery Charge - 0.15 - μC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 16mH, IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics |
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