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FDD6N50F Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDD6N50F
Descripción Electrónicos  N-Channel MOSFET 500V, 5.5A, 1.15廓
Download  9 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6N50F Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDD6N50F / FDU6N50F Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information T
C = 25
oC unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD6N50F
FDD6N50FTM
D-PAK
380mm
16mm
2500
FDD6N50F
FDD6N50FTF
D-PAK
380mm
16mm
2000
FDU6N50F
FDU6N50FTU
I-PAK
-
-
70
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25oC
-
0.15
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
10
μA
VDS = 400V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA3.0
-
5.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 2.75A
-
1.0
1.15
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 2.75A
(Note 4)
-4.3
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
720
960
pF
Coss
Output Capacitance
-
85
115
pF
Crss
Reverse Transfer Capacitance
-
6.3
9.5
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 400V, ID = 6A
VGS = 10V
(Note 4, 5)
-15
19.8
nC
Qgs
Gate to Source Gate Charge
-
4.4
-
nC
Qgd
Gate to Drain “Miller” Charge
-
6.1
-
nC
td(on)
Turn-On Delay Time
VDD = 250V, ID = 6A
RG = 25Ω
(Note 4, 5)
-17
44
ns
tr
Turn-On Rise Time
-
28.3
66.6
ns
td(off)
Turn-Off Delay Time
-
33.4
76.7
ns
tf
Turn-Off Fall Time
-
20.5
51
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
5.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
22
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5.5A
-
-
1.5
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 5.5A
dIF/dt = 100A/μs
(Note 4)
-85
-
ns
Qrr
Reverse Recovery Charge
-
0.15
-
μC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16mH, IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 5.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width
≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics


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