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STB40NF10 Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STB40NF10
Descripción  N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET™ II Power MOSFET
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STB40NF10 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STB40NF10
Electrical characteristics
5/13
Table 5.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
50
200
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 50A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 50A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 15)
114
456
8
ns
nC
A


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