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BUK75 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BUK75
Descripción Electrónicos  N-channel TrenchMOS standard level FET
Download  14 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK75 Datasheet(HTML) 2 Page - NXP Semiconductors

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BUK75_7608-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 16 November 2007
2 of 14
NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
3.
Ordering information
4.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BUK7508-40B
TO-220AB plastic single-ended package; heat sink mounted; 1 mounting hole; 3-leads SOT78A
BUK7608-40B
D2PAK
plastic single-ended surface mounted package (D2PAK); 3 leads (one lead
cropped)
SOT404
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
40
V
VDGR
drain-gate voltage (DC)
RGS =20kΩ
-40
V
VGS
gate-source voltage
-
±20
V
ID
drain current
Tmb =25 °C; VGS = 10 V; see Figure 2 and 3
[1] -
101
A
[2] -75
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
[1] -71
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
407
A
Ptot
total power dissipation
Tmb =25 °C; see Figure 1
-
157
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current
Tmb =25 °C
[1] -
101
A
[2] -75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs
-
407
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A; VDS ≤ 40 V;
VGS = 10 V; RGS =50 Ω; starting at Tmb =25 °C
-
241
mJ


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