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BUK75 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK75 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 2 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 3. Ordering information 4. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 2. Ordering information Type number Package Name Description Version BUK7508-40B TO-220AB plastic single-ended package; heat sink mounted; 1 mounting hole; 3-leads SOT78A BUK7608-40B D2PAK plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped) SOT404 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 40 V VDGR drain-gate voltage (DC) RGS =20kΩ -40 V VGS gate-source voltage - ±20 V ID drain current Tmb =25 °C; VGS = 10 V; see Figure 2 and 3 [1] - 101 A [2] -75 A Tmb = 100 °C; VGS = 10 V; see Figure 2 [1] -71 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 407 A Ptot total power dissipation Tmb =25 °C; see Figure 1 - 157 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current Tmb =25 °C [1] - 101 A [2] -75 A IDRM peak reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs - 407 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS =50 Ω; starting at Tmb =25 °C - 241 mJ |
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