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TPCF8303 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCF8303 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCF8303 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 10 V −10 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −200 μA −0.45 ⎯ −1.2 V RDS (ON) VGS = −1.8 V, ID = −1.5 A ⎯ 120 250 RDS (ON) VGS = −2.5 V, ID = −1.5 A ⎯ 63 87 Drain-source ON resistance RDS (ON) VGS = −4.5 V, ID = −1.5 A ⎯ 43 58 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.5 A 3.0 6.0 ⎯ S Input capacitance Ciss ⎯ 860 ⎯ Reverse transfer capacitance Crss ⎯ 110 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 140 ⎯ pF Rise time tr ⎯ 5.6 ⎯ Turn-on time ton ⎯ 16 ⎯ Fall time tf ⎯ 16 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 55 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 11 ⎯ Gate-source charge1 Qgs1 ⎯ 0.9 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −16 V, VGS = −5 V, ID = −3 A ⎯ 2.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −12 A Forward voltage (diode) VDSF IDR = −3.0 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ∼− −10 V −5 V VGS 0 V ID = −1.5 A VOUT |
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