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TPCP8001-H Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPCP8001-H
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8001-H Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPCP8001-H
2006-05-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8001-H
High Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
7.2
Drain current
Pulsed (Note 1)
IDP
28.8
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
1.68
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
0.84
W
Single-pulse avalanche energy
(Note 3)
EAS
33.6
mJ
Avalanche current
IAR
7.2
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.066
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
Marking (Note 5)
1
2
3
4
8
7
6
5
8
7
6
5
1
2
3
4
8001H
Lot No.
0.33±0.05
0.28+0.1
-0.11
1.12+0.13
-0.12
0.475
0.65
A
0.05 M
2.9±0.1
4
1
5
8
0.8±0.05
0.17±0.02
B
B
0.05 M
A
S
0.025
S
1.12+0.13
-0.12
0.28+0.1
-0.11
1.Source
5.Drain
2.Source
6.Drain
3.Source
7.Drain
4.Gate
8.Drain


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