Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

TPCP8202 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPCP8202
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8202 Datasheet(HTML) 1 Page - Toshiba Semiconductor

  TPCP8202 Datasheet HTML 1Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 2Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 3Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 4Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 5Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 6Page - Toshiba Semiconductor TPCP8202 Datasheet HTML 7Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
TPCP8202
2007-01-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications
Motor Drive Applications
DC/DC Converters
• Lead (Pb)-free
• Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 20 S (typ.)
• Low leakage current: IDSS = 10 μA (max)(VDS = 30 V)
• Enhancement model: Vth = 0.7 to 1.4V
(VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
5.5
Drain current
Pulse
(Note 1)
IDP
22
A
Single-device operation
(Note 3a)
PD (1)
1.48
Drain power
dissipation
(t
= 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (2)
1.23
Single-device operation
(Note 3a)
PD (1)
0.58
Drain power
dissipation
(t
= 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
PD (2)
0.36
W
Single-pulse avalanche energy
(Note 4)
EAS
7.86
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
Marking (Note 6)
1
2
3
4
8
7
6
5
0.33±0.05
0.28+0.1
-0.11
1.12+0.13
-0.12
0.475
0.65
A
0.05 M
2.9±0.1
4
1
5
8
0.8±0.05
0.17±0.02
B
B
0.05 M
A
S
0.025
S
1.12+0.13
-0.12
0.28+0.1
-0.11
5. Drain2
6. Dain2
7. Drain1
8. Drain1
1.Source1
2.Gate1
3.Source2
4.Gate2
8202
1
2
3
4
8
7
6
5
Lot No.


Número de pieza similar - TPCP8202

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Toshiba Semiconductor
TPCP8202 TOSHIBA-TPCP8202 Datasheet
251Kb / 7P
   Portable Equipment Applications Motor Drive Applications DC_DC Converters
TPCP8202 TOSHIBA-TPCP8202_1 Datasheet
251Kb / 7P
   Portable Equipment Applications Motor Drive Applications DC_DC Converters
More results

Descripción similar - TPCP8202

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Toshiba Semiconductor
TK25A10K3 TOSHIBA-TK25A10K3 Datasheet
312Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TPC8114 TOSHIBA-TPC8114 Datasheet
168Kb / 4P
   TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
2SK3565 TOSHIBA-2SK3565_V01 Datasheet
218Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV
2013-11-01
TPC8115 TOSHIBA-TPC8115 Datasheet
2Mb / 4P
   FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSIV)
TK40A10K3 TOSHIBA-TK40A10K3 Datasheet
208Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS??
2SK3397 TOSHIBA-2SK3397 Datasheet
96Kb / 3P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
2SK3236 TOSHIBA-2SK3236 Datasheet
228Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
TPCS8201 TOSHIBA-TPCS8201 Datasheet
314Kb / 7P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
TPCP8002 TOSHIBA-TPCP8002 Datasheet
228Kb / 7P
   TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
2SK3763 TOSHIBA-2SK3763 Datasheet
96Kb / 6P
   Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com