TPCP8402 datasheet(6/11 Pages) TOSHIBA

No. de pieza	TPCP8402

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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6 / 11 page

TPCP8402

2006-11-13

6

P-ch

Drain

−source voltage VDS (V)

Capacitance – VDS

-0.1

10

100

1000

10000

-1

-3 -5

-10

-30 -50 -100

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain

−source voltage VDS (V)

IDR – VDS

Ambient temperature Ta (°C)

Vth – Ta

0

-0.5

-1.0

-1.5

-2.0

−80

−40

0

40

80

120

160

Common source

VDS = -10 V

ID = -200μA

Pulse test

160

−40

0

40

80

120

−80

0

0.1

Common source

Ta

= 25°C

Pulse test

0.3

0.5

1

3

5

10

0.9

1.2

VGS = 0 V

-5.0

-3.0

-1.0

-10

0.6

1.5

Total gate charge Qg (nC)

Dynamic input/output

characteristics

0

4

8

Common source

ID = -3.2 A

Ta

= 25°C

Pulse test

VDD = -24V

VDS

VGS

12

16

-25

-10

0

-15

-20

-15

-10

0

-12

-6

-24

-12

VDD = -6V

-5

-30

Ambient temperature Ta (°C)

PD – Ta

2.0

0.8

0

25

50

125

150

0.4

1.2

1.6

200

(1)

(2)

(3)

(4)

75

100

175

Device mounted on a glass-epoxy

board (a)

(Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual

operation

(Note 3b)

Device mounted on a glass-epoxy

board (b)

(Note 2b)

(3) Single-device operation

(Note 3a)

(4) Single-device value at dual

operation

(Note 3b)

t

= 5 s

VGS = -10V

VGS = -4.5V

ID = -0.8A, -1.5A, -4.5A

Common source

Pulse test

150

120

60

30

0

90

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TPCP8402 Datasheet(PDF) 6 Page - Toshiba Semiconductor

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