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2SC3075_06 Datasheet(Hoja de datos) 2 Page - Toshiba Semiconductor

No. de Pieza. 2SC3075_06
Descripción  Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 2 page
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2SC3075
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 400 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
500
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
V
VCE = 5 V, IC = 0.1 A
20
100
DC current gain
hFE
VCE = 5 V, IC = 0.5 A
10
Collector-emitter saturation voltage
VCE (sat)
IC = 0.1 A, IB = 0.01 A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.1 A, IB = 0.01 A
1.0
V
Rise on time
tr
1.0
Storage time
tstg
2.5
Switching time
Fall time
tf
IB1 = −IB2 = 0.05 A,
Duty cycle ≤ 1%
1.5
μs
Marking
C3075
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
20 μsIB1
IB2
VCC ≈ 200 V
IB2
INPUT
OUTPUT




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