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2SC3075 Datasheet(Hoja de datos) 4 Page - Toshiba Semiconductor

No. de Pieza. 2SC3075
Descripción  Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 4 page
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2SC3075
2006-11-09
4
Safe Operating Area
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Switching Characteristics
Base-emitter voltage VBE (V)
IC – VBE
Pulse width
tw (s)
rth – tw
Collector-emitter voltage VCE (V)
10
−3
0
Common emitter
VCE = 5 V
−40
25
Tc = 100°C
1
10
−1
10
−2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
0.1
0.001
100
0.01
0.1
1
10
100
1000
10
1
(1)
(2)
IC/IB = 10
IB1 = −IB2
Pulse width = 20 μs
Duty cycle ≤ 1%
Tc = 25°C
0.1
0
100
10
30
50
3
5
1
0.3
0.5
0.1
0.2
0.3
0.4
0.5
tstg
tf
tr
0
0
Common emitter
VCE = 5 V
1000
800
600
400
200
0.2
0.4
0.6
0.8
1.2
1.0
−40
25
Tc = 100°C
10
3
0.01
1
1
0.3
0.1
0.05
0.03
3
30
300
100
1000
0.5
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 μs*
100 μs*
DC operation
Tc = 25°C
100 ms*
10 ms*




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